半导体学报2009，Vol.30Issue(1)：013001-1-013001-4,2.DOI:10.1088/1674-4976/30/1/013001
Improved optical performance of GaN grown on pattered sapphire substrate
Improved optical performance of GaN grown on pattered sapphire substrate
摘要
Abstract
An improved GaN film with low dislocation density was grown on a C-face patterned sapphire substrate (PSS) by metalorganic chemical vapor deposition (MOCVD). The vapor phase epitaxy starts from the regions with no etched pits and then spreads laterally to form a continuous GaN film. The properties of the GaN film have been investigated by double crystal X-ray diffraction (DCXRD), atomic force microscopy (AFM) and photoluminescence (PL), respectively. The full-width at half-maximum (FWHM) of the X-ray diffraction curves (XRCs) for the GaN film grown on PSS in the (0002) plane and the (10(1)2) plane are as low as 312.80 arcsec and 298.08 acrsec, respec-tively. The root mean square (RMS) of the GaN film grown on PSS is 0.233 nm and the intensity of the PL peak is comparatively strong.关键词
double crystal X-ray diffraction/atomic force microscopy/photoluminescence/GaN/wet-etchingKey words
double crystal X-ray diffraction/atomic force microscopy/photoluminescence/GaN/wet-etching分类
信息技术与安全科学引用本文复制引用
Yao Guangrui,Fan Guanghan,Li Shuti,Zhang Yong,Zhou Tianmin..Improved optical performance of GaN grown on pattered sapphire substrate[J].半导体学报,2009,30(1):013001-1-013001-4,2.基金项目
Project supported by the National Natural Science Foundation of China (No. 50602018). （No. 50602018）
