半导体学报2009，Vol.30Issue(1)：014001-1-014001-5,2.DOI:10.1088/1674-4926/30/1/014001
A novel GAAC FinFET transistor: device analysis, 3D TCAD simulation, and fabrication
A novel GAAC FinFET transistor: device analysis, 3D TCAD simulation, and fabrication
Xiao Deyuan 1Wang Xi 2Yuan Haijiang 1Yu Yuehui 3Xie Zhifeng 1Chi Minhwa4
作者信息
- 1. Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
- 2. Semiconductor Manufacturing International Shanghai Corporation, Shanghai 201203, China
- 3. Synopsys Inc,Shanghai200050,China
- 4. Semiconductor Manufacturing International(Shanghai)Corporation,Shanghai 201203,China
- 折叠
摘要
Abstract
We report the analysis and TCAD results of a gate-all-around cylindrical (GAAC) FinFET with operation based on channel accumulation. The cylindrical channel of the GAAC FinFET is essentially controlled by an infinite number of gates surrounding the cylinder-shaped channel. The symmetrical nature of the field in the channel leads to improved electrical characteristics, e.g. reduced leakage current and negligible corner effects. The Ion/Ioff ratio of the device can be larger than 106, as the key parameter for device operation. The GAAC FinFET operating in accumulation mode appears to be a good potential candidate for scaling down to sub-l0 nm sizes.关键词
accumulation mode/ GAAC FinFET/ device analysis/ TCAD simulation/ fabricationKey words
accumulation mode/ GAAC FinFET/ device analysis/ TCAD simulation/ fabrication分类
信息技术与安全科学引用本文复制引用
Xiao Deyuan,Wang Xi,Yuan Haijiang,Yu Yuehui,Xie Zhifeng,Chi Minhwa..A novel GAAC FinFET transistor: device analysis, 3D TCAD simulation, and fabrication[J].半导体学报,2009,30(1):014001-1-014001-5,2.
