半导体学报2009，Vol.30Issue(1)：015003-1-015003-4,2.DOI:10.1088/1674-4926/30/1/015003
Design and measurement of a 53 GHz balanced Colpitts oscillator
Design and measurement of a 53 GHz balanced Colpitts oscillator
Zhao Yan 1Wang Zhigong 1Li Wei 1Zhang Li1
作者信息
- 1. Institute of RF-& OE-ICs, Southeast University, Nanjing 210096, China
- 折叠
摘要
Abstract
A 53 GHz Colpitts oscillator implemented in a SiGe:C BiCMOS technology is presented. Limited by a 26.5 GHz frequency analyzer, the oscillator was measured indirectly through an on-chip mixer. The mixer down-converted the oscillating frequency to an intermediate frequency (IF) below 26.5 GHz. By adjusting the local os-cillating (LO) frequency and recording the changes of IF frequency, the oscillator's output frequency (RF) was determined. Additionally, using phase noise theory of mixers, the oscillator's phase noise was estimated as-58 dBc/Hz at 1 MHz offset and the output power was about-21 dBm. The chip is 270×480 μm in size.关键词
Colpitts/ negative resistance/ oscillator/ phase noiseKey words
Colpitts/ negative resistance/ oscillator/ phase noise分类
信息技术与安全科学引用本文复制引用
Zhao Yan,Wang Zhigong,Li Wei,Zhang Li..Design and measurement of a 53 GHz balanced Colpitts oscillator[J].半导体学报,2009,30(1):015003-1-015003-4,2.
