半导体学报2009，Vol.30Issue(1)：016001-1-016001-3,2.DOI:10.1088/1674-4926/30/1/016001
Microtrenching effect of SiC ICP etching in SF6/O2 plasma
Microtrenching effect of SiC ICP etching in SF6/O2 plasma
摘要
Abstract
Inductively coupled plasma (ICP) etching of single crystal 6H-silicon carbide (SIC) is investigated using oxygen (O2)-added sulfur hexafluoride (SF6) plasmas. The relations between the microtrenching effect and ICP coil power, the composition of the etch gases and different bias voltages are discussed. Experimental results show that the microtrench is caused by the formation of a SiFxOy layer, which has a greater tendency to charge than SiC, after the addition of O2. The microtrenching effect tends to increase as the ICP coil power and bias voltage increase. In addition, the angular distribution of the incident ions and radicals also affects the shape of the microtrench.关键词
silicon carbide/ microtrenching effect/ inductively coupled plasma/ etch rateKey words
silicon carbide/ microtrenching effect/ inductively coupled plasma/ etch rate分类
信息技术与安全科学引用本文复制引用
Ding Ruixue,Yang Yintang,Han Ru..Microtrenching effect of SiC ICP etching in SF6/O2 plasma[J].半导体学报,2009,30(1):016001-1-016001-3,2.基金项目
Project supported by the Chinese National Advance Research Program of Science and Technology (Nos. 51308030201, 51323040118). （Nos. 51308030201, 51323040118）
