半导体学报2007，Vol.28Issue(7)：1005-1008,4.
PECVD沉积微晶硅薄膜过程中氢原子对透明导电膜的影响
Influence of Atomic Hydrogen on Transparent Conducting Oxide During Hydrogenated Microcrystalline Si Preparation by PECVD
摘要
Abstract
The hydrogen plasma degradation of transparent conduction oxides (TCO) is studied for hydrogenated microcrystalline Si(μc-Si:H)prepared by plasma enhanced chemical vapor deposition (PECVD). TCO films such as SnO2 and SnO2/ZnO bi-layer films were exposed to atomic H at various substrate temperatures and for various treatment times. A decrease in the transmittance due to reduction by atomic H was scarcely observed for SnO2/ZnO bi-layer, while a decrease for SnO2 was found to depend strongly on the substrate temperature. The resistivity of SnO2 films decreases significantly when substrate temperature exceeds 150℃ in H-plasma. However,H-plasma treatment has little impact on the resistivity of SnO2/ZnO bi-layer film. The reason for the decrease in the transmittance is the appearance of metallic Sn on the surface, and under this condition no μc-Si: H film is deposited.SnO2/ZnO bi-layer is very effective for the suppression of the reduction of TCO during μc-Si: H deposition. The performance of microcrystalline silicon solar cells fabricated on ZnO/SnO2/glass is also investigated.关键词
透明导电氧化物/氢化微晶硅/H等离子体退化Key words
TCO/hydrogenated microcrystalline silicon/hydrogen plasma degradation分类
信息技术与安全科学引用本文复制引用
陈永生,汪建华,卢景霄,杨根,郜小勇,杨仕娥..PECVD沉积微晶硅薄膜过程中氢原子对透明导电膜的影响[J].半导体学报,2007,28(7):1005-1008,4.基金项目
Project supported by the State Key Development Program for Basic Research of China (No. 2006CB202601)国家重点基础研究发展规划资助项目(批准号:2006CB202601) （No. 2006CB202601）
