半导体学报2009，Vol.30Issue(2)：101-104,4.DOI:10.1088/1674-4926/30/2/026001
NiO removal of Ni/Au Ohmic contact to p-GaN after annealing
NiO removal of Ni/Au Ohmic contact to p-GaN after annealing
摘要
Abstract
The Ni/Au contact was treated with oxalic acid after annealing in O2 ambient, and its I-V characteristic showed the property of contact has been obviously improved. An Auger electron spectroscopy (AES) depth pro-file of the contact as-annealed showed that the top layer was highly resistive NiO, while an X-ray photo-electron spectroscopy (XPS) of oxalic acid treated samples indicated that the NiO has been removed effectively. A scanning electron microscope (SEM) was used to observe the surface morphology of the contacts, and it was found that the lacunaris surface right after annealing became quite smooth with lots of small Au exposed areas after oxalic acid treatment. When the test probe or the subsequently deposited Ti/Au was directly in contact with these small Au areas, they worked as low resistive current paths and thus decrease the specific contact resistance.关键词
oxalic acid treatment/ specific contact resistance/ NiOKey words
oxalic acid treatment/ specific contact resistance/ NiO分类
信息技术与安全科学引用本文复制引用
林孟喆,曹青,颜廷静,张书明,陈良惠..NiO removal of Ni/Au Ohmic contact to p-GaN after annealing[J].半导体学报,2009,30(2):101-104,4.基金项目
Project supported by the National Natural Science Foundation of China (No. 60836003). （No. 60836003）
