电子器件2001，Vol.24Issue(2)：101-106,6.
ULSI多层布线中SiO2介质CMP技术
Chemical Mechanical Polishing of Silica Dielectric
in ULSI Mutilevel Metallization
摘要
Abstract
The mechanism, the choosing of processing conditions and content and effect of polishing slurry of silica dielectric in ULSI multilevel are analyzed. The way of increasing the polishing rate, improving of the surface condition and avoiding metallic ions by using chemical method is outlined. Projects are suggested to solve the present problems.关键词
化学机械抛光/全局平面化/多层布线/ULSI/二氧化碳分类
信息技术与安全科学引用本文复制引用
檀柏梅,刘玉岭..ULSI多层布线中SiO2介质CMP技术[J].电子器件,2001,24(2):101-106,6.
