半导体学报2009，Vol.30Issue(8)：10-13,4.DOI:10.1088/1674-4926/30/8/082002
Charge transport performance of high resistivity CdZnTe crystals doped with In/Al
Charge transport performance of high resistivity CdZnTe crystals doped with In/Al
Xu Yadong 1Xu Lingyan 2Wang Tao 1Zha Gangqiang 1Fu Li 1Jie Wanqi 1Sellin P1
作者信息
- 1. School of Material Science,Northwestern Polytechnical University,Xi'an 710072,China
- 2. Department of Physics,University of Surrey,Guildford,GU2 7XH,UK
- 折叠
摘要
Abstract
1Am @ 59.54 keV isotope.关键词
CdZnTe crystals/α particle pulse height spectra/charge transport performance/In/Al dopingKey words
CdZnTe crystals/α particle pulse height spectra/charge transport performance/In/Al doping分类
信息技术与安全科学引用本文复制引用
Xu Yadong,Xu Lingyan,Wang Tao,Zha Gangqiang,Fu Li,Jie Wanqi,Sellin P..Charge transport performance of high resistivity CdZnTe crystals doped with In/Al[J].半导体学报,2009,30(8):10-13,4.
