中山大学学报（自然科学版）2009，Vol.48Issue(z2)：102-104,3.
真空冶金法提纯锑掺杂单晶硅埚底料的实验研究
Experimental Study on Purifying Pot Material of Sb-doped Mono-crystal Silicon by Vacuum Metallurgical Technique
摘要
Abstract
The pot material of Sb-doped mono-crystal silicon has been purified and casted by vacuum directional solidification tech-nique in this article. Growth patterns of the silicon ingots under different growth conditions have been analyzed. Meanwhile, inductive coupled plasma-atomic emission spectrometry (ICP-AES) has been used to detect the longitudinal distribution of main impurities in sili-con, The results show that the concentration of Sb increases alone the longitudinal direction from ingot bottom to middle top region because of the effect of directional solidification, and decreases from the middle top to top region because of the effect of vacuum distillation.关键词
多晶硅/埚底料/定向凝固/真空冶金Key words
multi-crystalline silicon/pot material/directional solidification/vacuum metallurgy分类
信息技术与安全科学引用本文复制引用
唐绍雨,马文会,梅向阳,李志红,伍继君..真空冶金法提纯锑掺杂单晶硅埚底料的实验研究[J].中山大学学报（自然科学版）,2009,48(z2):102-104,3.基金项目
教育部新世纪优秀人才支持计划资助项目(NCET-07-0387) （NCET-07-0387）
云南省中青年学术技术带头人后备人才资助项目(2005PY01-33) （2005PY01-33）
