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A 3-5 GHz TH-UWB transmitter in 0.18-μm RF CMOS technology

Duan Jihai Wang Zhigong Li Zhiqun

半导体学报2009，Vol.30Issue(7)：103-106,4.

半导体学报2009，Vol.30Issue(7)：103-106,4.DOI:10.1088/1674-4926/30/7/075006

A 3-5 GHz TH-UWB transmitter in 0.18-μm RF CMOS technology

Duan Jihai ¹Wang Zhigong ²Li Zhiqun¹

作者信息

1. School of Integrated Circuits, Southeast University, Nanjing 210096, China
2. School of Information & Communication, Guilin University of Electronic Technology, Guilin 541004, China
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摘要

Abstract

5 mV at a 50 Ω load from a 1.8-V supply, the return loss (S11) at the output port is less than -10 dB, and the chip size is 0.7 × 0.8 mm2, with a power consumption of 12.3 mW.

关键词

complementary metal oxide semiconductor/transmitter/time-hopping ultra wideband

Key words

complementary metal oxide semiconductor/transmitter/time-hopping ultra wideband

引用本文复制引用

Duan Jihai,Wang Zhigong,Li Zhiqun..A 3-5 GHz TH-UWB transmitter in 0.18-μm RF CMOS technology[J].半导体学报,2009,30(7):103-106,4.

基金项目

Project supported by the National High Technology Research and Development Program of China (No. 2007AA03Z454) and the Science Foundation of Guangxi Province, China (No. 0575096). （No. 2007AA03Z454）

半导体学报

OA北大核心CSCDCSTPCDEI

ISSN：1674-4926

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