半导体学报2008，Vol.29Issue(6)：1036-1039,4.
总剂量辐照加固的PDSOI CMOS 3线-8线译码器
A Total Dose Radiation Hardened PDSOI CMOS 3-Line to 8-Line Decoder
刘梦新 1韩郑生 1李多力 1刘刚 1赵超荣 1赵发展1
作者信息
- 1. 中国科学院徽电子研究所,北京100029
- 折叠
摘要
Abstract
The first domestic total dose hardened 2μm partially depleted silicon-on-insulator (PDSOI) CMOS 3-line to 8-line decoder fabricated in SIMOX is demonstrated. The radiation performance is characterized by transistor threshold voltage shifts, circuit static leakage currents, and I-V curves as a function of total dose up to 3 × 105 rad(Si). The worst case threshold voltage shifts of the front channels are less than 20mV for nMOS transistors at 3 × 105 rad(Si) and follow-up ir-radiation and less than 70mV for the pMOS transistors. Furthermore, no significant radiation induced leakage currents and functional degeneration are observed.关键词
部分耗尽SOI/译码器/总剂量/辐照Key words
PDSOI/ decoder/ total dose/ radiation分类
信息技术与安全科学引用本文复制引用
刘梦新,韩郑生,李多力,刘刚,赵超荣,赵发展..总剂量辐照加固的PDSOI CMOS 3线-8线译码器[J].半导体学报,2008,29(6):1036-1039,4.
