人工晶体学报2006，Vol.35Issue(1)：104-106,3.
玻璃衬底上中温制备多晶硅薄膜的量子态现象
Quantum State of Poly-Si Films at Middle Temperature on Glass Substrate
靳瑞敏 1卢景霄 1冯团辉 1王海燕 1张丽伟1
作者信息
- 1. 郑州大学材料物理教育部重点实验室,郑州,450052
- 折叠
摘要
Abstract
Amorphous silicon films prepared by PECVD on the glass substrate have been crystallized by conventional furnace annealing (FA) at middle temperature. From the Raman spectra, X-ray diffraction(XRD) and scanning electronic microscope (SEM), the quantum state in these processions was found and discussed. The crystallized grain size is biggest at 850℃ for 3h by FA.关键词
PECVD法/非晶硅薄膜/传统炉退火/量子态/晶粒大小Key words
PECVD/a-Si: H film/conventional furnace annealing/quantum state/grain size分类
能源科技引用本文复制引用
靳瑞敏,卢景霄,冯团辉,王海燕,张丽伟..玻璃衬底上中温制备多晶硅薄膜的量子态现象[J].人工晶体学报,2006,35(1):104-106,3.
