半导体学报2002，Vol.23Issue(10)：1046-1050,5.
SiO2/Ta界面反应及其对铜扩散的影响
Interface Reaction of SiO2/Ta and Its Influence on Cu Diffusion
摘要
Abstract
Ta/NiFe film is deposited on Si substrate precoated with SiO2 by magnetron sputtering.SiO2/Ta interface and Ta5Si3 standard sample are investigated by using X-ray photoelectron spectroscopy (XPS) and peak decomposition technique.The results show that there is a thermodynamically favorable reaction at the SiO2/Ta interface:37Ta+15SiO2=5Ta5Si3+6Ta2O5.The more stable products Ta5Si3 and Ta2O5 may be beneficial to stop the diffusion of Cu into SiO2.关键词
ULSI铜互连/扩散阻挡层/界面反应/X射线光电子能谱Key words
copper interconnection in ULSI/diffusion barrier/interface reaction/X-ray photoelectron spectroscopy分类
信息技术与安全科学引用本文复制引用
龙世兵,马纪东,于广华,赵洪辰,朱逢吾,张国海,夏洋..SiO2/Ta界面反应及其对铜扩散的影响[J].半导体学报,2002,23(10):1046-1050,5.基金项目
国家自然科学基金资助项目(批准号:19890310) （批准号:19890310）
