半导体学报2000，Vol.21Issue(11)：1050-1054,5.
Carrier Depth Profile of Si/SiGe/Si n-p-n HBT Structural Materials Characterized by Electrochemical Capacitance-Voltage Method
Carrier Depth Profile of Si/SiGe/Si n-p-n HBT Structural Materials Characterized by Electrochemical Capacitance-Voltage Method
林燕霞 1黄大定 1张秀兰 1刘金平 1李建平 1高飞 1孙殿照 1曾一平 1孔梅影1
作者信息
- 1. Materials Science Center, Institute of Semiconductors, The Chinese Academy of Sciences, Beijing 100083, China
- 折叠
摘要
Abstract
Si/SiGe/Si n-p-n HBT structural materials have been grown by gas source molecular beam epitaxy with disilane, solid Ge, diborane and phosphine as sources. The materials are of good structural properties. The effectiveness of Electrochemical Capacitance-Voltage (ECV) technique on profiling the shallow doped layers of nanometer dimensions has been demonstrated. Compared with spreading resistance probe, the ECV technique is relatively easy to get the carrier distribution profile, especially for the Si/SiGe/Si HBT structural materials with shallow (≤50nm) base regions (p-type SiGe layer, Ge content about 0.2). The results show that n-p-n structures can be obtained by in situ doping.关键词
SiGe HBT/GSMBE/ECVKey words
SiGe HBT/GSMBE/ECV分类
信息技术与安全科学引用本文复制引用
林燕霞,黄大定,张秀兰,刘金平,李建平,高飞,孙殿照,曾一平,孔梅影..Carrier Depth Profile of Si/SiGe/Si n-p-n HBT Structural Materials Characterized by Electrochemical Capacitance-Voltage Method[J].半导体学报,2000,21(11):1050-1054,5.
