半导体学报2000，Vol.21Issue(11)：1069-1074,6.
Numerical Simulation of BJMOSFET on Current-Voltage Characteristics
Numerical Simulation of BJMOSFET on Current-Voltage Characteristics
曾云 1金湘亮 1颜永红 1刘久玲 2成世明1
作者信息
- 1. Department of Applied Physics, Hunan University, Changsha 410082, China
- 2. Science and Technology Institute, Hunan Agricultural University, Changsha 410128, China
- 折叠
摘要
Abstract
A new power MOSFET Structure with a pn junction--Bipolar Junction MOSFET (BJMOSFET) has been proposed. The device has the advantages of both BJT and FET. The numerical model of the I-V characteristics of BJMOSFET has been obtained on the basis of both numerical and analytical methods. With the software package of Mathematic, we firstly calculate the gain factor, and then simulate the voltage tranmission, voltage output and voltage transfer's characteristic graphs of the BJMOSFET. The simulation result indicates that BJMOSFET has the current density, which is about 25% larger than the power MOSFET, under the same operating conditions and with the same structure parameters, except that the threshold voltage increase a little.关键词
bipolar/voltage control/numerical analysisKey words
bipolar/voltage control/numerical analysis分类
信息技术与安全科学引用本文复制引用
曾云,金湘亮,颜永红,刘久玲,成世明..Numerical Simulation of BJMOSFET on Current-Voltage Characteristics[J].半导体学报,2000,21(11):1069-1074,6.
