半导体学报2004，Vol.25Issue(9)：1084-1090,7.
亚微米、深亚微米LDD MOSFET的衬底电流模型中特征长度改进的描述
An Improved Description of Characteristics Length in Substrate Current Model for Submicron and Deep-Submicron LDD MOSFET's
摘要
Abstract
A novel substrate current model is proposed for submicron and deep-submicron lightly-doped-drain (LDD) n-MOSFET,with the emphasis on accurate description of the characteristics length by taking the effects of channel length and bias into account.This is due to that the characteristics lenth significantly affects the maximum lateral electric field and the length of velocity saturation region,both of which are very important in modeling the drain current and the substrate current.The comparison between simulations and experiments shows a good prediction of the model for submicron and deep-submicron LDD MOSFET.Moreover,the analytical model is suitable for descgn of devices as it is low in computation consumption.关键词
轻掺杂漏MOSFET/衬底电流/特征长度/最大横向电场Key words
LDD MOSFET/substrate current/characteristics length/maximum lateral electric field分类
信息技术与安全科学引用本文复制引用
于春利,杨林安,郝跃..亚微米、深亚微米LDD MOSFET的衬底电流模型中特征长度改进的描述[J].半导体学报,2004,25(9):1084-1090,7.基金项目
国家自然科学基金资助项目(批准号:60206006) （批准号:60206006）
