发光学报2002，Vol.23Issue(2)：109-113,5.
GaNAs/GaAs量子阱的激子局域化以及退局域化
Exciton Localization and Delocalization in GaNAs/GaAs Quantum Wells
摘要
Abstract
We have studied exciton localization and delocalization effect in GaNAs/GaAs quantum wells (QWs) grown by molecular beam epitaxy (MBE) using photoluminescence (PL) and timeresolved PL measurements. Studied results suggest that, at low temperature and under a conventional CW excitation, measured PL spectra were dominated by localized exciton (LE) emission caused by potential fluctuations in GaNAs layer. However, under short pulse laser excitation, it is different. An extra high-energy PL peak comes out from GaNAs/GaAs QWs and dominates the PL spectra under high excitation and/or at high temperature. By investigation, we have attributed the new PL peak to the recombination of delocalized excitons in QWs. This recombination process competes with the localized exciton emission, which, we believe, constitutes the "Sshaped" temperature-dependent emission shift often reported in ternary nitrides of InGaN and A1GaN in the literature.关键词
GaNAs/红外/量子阱Key words
GaNAs/IR/quantum well分类
数理科学引用本文复制引用
罗向东,徐仲英,葛惟琨..GaNAs/GaAs量子阱的激子局域化以及退局域化[J].发光学报,2002,23(2):109-113,5.基金项目
国家自然科学基金资助项目(19974045) （19974045）
中国科学院纳米科学技术项目基金资助项目 （）
