电子器件2008，Vol.31Issue(1)：109-114,6.
基于高迁移率微晶硅的薄膜晶体管
High Mobility Microcrystalline Silicon Thin-Film Transistors
CHAN Kah-Yoong 1Eerle Bunte 2Helmut Stiebig 2Dietmar Knipp2
作者信息
- 1. 不来梅国际大学,科学与工程学院,不来梅,28759,德国
- 2. 玉利希研究中心,玉利希,52425,德国
- 折叠
摘要
Abstract
Microcrystalline silicon (μc-Si: H) has recently been proven to be a promising material for thin- film transistors (TFTs). We present μc-Si.H TFTs fabricated by plasma-enhanced chemical vapor deposi-tion at temperatures below 200℃ in a condition similar to the fabrication of amorphous silicon TFTs. The μc-Si. H TFTs exhibit device mobilities exceeding 30 cm2/Vs and threshold voltages in the range of 2.5 V.Such high mobilities are observed for long channel devices (50～200 μm). For short channel device (2μm), the mobility reduces to 7 cm2/Vs. Furthermore the threshold voltage of the TFTs decreases with de-creasing channel length. A simple model is developed, which explains the observed reduction of the device mobility and threshold voltage with decreasing channel length by the influence of drain and source contact resistance.关键词
薄膜晶体管/TFT/微晶硅/大面积电子Key words
Thin-Film Transistors/ TFTs/ Microcrystalline Silicon/ Large Area Electronics分类
信息技术与安全科学引用本文复制引用
CHAN Kah-Yoong,Eerle Bunte,Helmut Stiebig,Dietmar Knipp..基于高迁移率微晶硅的薄膜晶体管[J].电子器件,2008,31(1):109-114,6.
