半导体学报2001，Vol.22Issue(9)：1102-1106,5.
RESURF LDMOS功率器件表面场分布和击穿电压的解析模型
Analytical Model of Surface Field Distribution and Breakdown Voltage for RESURF LDMOS Transistor
摘要
Abstract
An analytical model of the surface field distribution and breakdown voltage of the reduced surface field lateral double diffusion MOS transistor is proposed.Based on the 2-D Poisson's equation solution,the derived model gives the closed form solutions of the surface potential and electrical field distributions as a function of the structure parameters and drain bias.A criterion for obtaining the optimal trade-off between the breakdown voltage and on-resistance is also presented to serve to quantify the maximum breakdown voltage and optimal relations of all design parameters.Analytical results are shown in good agreement with the numerical analysis obtained by the semiconductor device simulator MEDICI and previous reported experimental data.关键词
RESURF原理/LDMOS功率器件/表面场分布/击穿电压/比导通电阻/优化设计分类
信息技术与安全科学引用本文复制引用
何进,张兴..RESURF LDMOS功率器件表面场分布和击穿电压的解析模型[J].半导体学报,2001,22(9):1102-1106,5.
