半导体学报2007，Vol.28Issue(z1)：1-11,11.
硅基光子材料和器件的进展
Recent Advancements in Si-Based Photonic Materials and Devices
摘要
Abstract
Silicon-based photonic devices,including stimulated emission from Si diodes,resonant cavity enhanced (RCE)photodiodes with quantum structures,metal oxide semiconductor(MOS)optical modulators with high frequency,SOI optical matrix switches and wavelength tunable filters,are reviewed.Emphasis is placed on our recent results for SOI-based thermo-optic waveguide matrix switches with low insertion loss and fast response.A folding re-arrangeable non-blocking 4×4 matrix switch with total internal reflection(TIR)mirrors and a first blocking 16×16 matrix were fabricated on SOI wafer.The extinction ratio and the crosstalk are excellent.The insertion loss and the polarization-dependent loss(PDL)at 1.55μm increase slightly with longer device length,more bending,and more intersecting waveguides.The insertion losses are expected to decrease by 2～3dB when anti-reflection films are added to the ends of the devices.The rise and fall times of the devices are 2.1 and 2.3μs,respectively.关键词
SOI/光开关阵列/光电二极管/光互连Key words
SOI/optical switch matrix/photodiodes/optical interconnection分类
电子信息工程引用本文复制引用
余金中,王启明..硅基光子材料和器件的进展[J].半导体学报,2007,28(z1):1-11,11.基金项目
国家自然科学基金(批准号:60336010),国家重点基础研究发展规划(批准号:G32000-03-66)及国家高技术研究发展计划(批准号:2002AA312060)资助项目Project supported by the National Natural Science Foundation of China(No.60336010),the State Key Development Program for Basic Research of China(No.G2000-03-66),and the National High Technologh Research and Development Program of China(No.2002AA312060) （批准号:60336010）
