半导体学报2006，Vol.27Issue(z1)：11-14,4.
电子和中子辐照n型6H-SiC的光致发光谱
Photoluminescence of Electron-and Neutron-Irradiated n-Type 6H-SiC
摘要
Abstract
n-type 6H-SiC materials irradiated with electrons having energies of Ee = 1.7,0.5, and 0.4MeV and neutrons are studied via low temperature photoluminescence. For Ee ≥0.5MeV electron-irradiated and neutron-irradiated samples, the LTPL emission lines S1/S2/S3 at 478. 6/483.3/486. 1nm are observed for the first time. Thermal annealing studies show that the defects S1/S2/S3 disappear at 500℃. However, the well-known D1-center is only detected for annealing temperatures over 700℃. By considering the threshold displacement energies of Emin (C) and Emin (Si) and thermal annealing behavior,it is found that the defects S1/S2/S3 are a set of silicon-related primary defects and the D1-center is a kind of secondary defect.关键词
6H-SiC/辐照/LTPL/缺陷Key words
6H-SiC/irradiation/LTPL/defects分类
信息技术与安全科学引用本文复制引用
钟志亲,Beling C D,龚敏,王鸥,余洲,杨治美,徐士杰,陈旭东,凌志聪,冯汉源..电子和中子辐照n型6H-SiC的光致发光谱[J].半导体学报,2006,27(z1):11-14,4.基金项目
国家自然科学基金资助项目(批准号:60076010) Project supported by the National Natural Science Foundation of China (No. 60076010) （批准号:60076010）
