半导体学报2002，Vol.23Issue(1)：11-15,5.
新的正向栅控二极管技术分离热载流子应力诱生SOI NMOSFET界面陷阱和界面电荷的研究
New Forward Gated-Diode Technique for Separating Front Gate Interface- from Oxide-Traps Induced by Hot-Carrier-Stress in SOI-NMOSFETs
摘要
Abstract
The front gate interface-and oxide-traps induced by hot-carrier-stress in SOI-NMOSFETs are studied.Based on a new forward gated-diode technique,the R-G current originating from the front interface traps is measured,and then the densities of the interface-and oxide-traps are separated independently.The experimental results show that the hot-carrier-stress of front channel not only results in the strong generation of the front interface traps,but also in the significant oxide traps.These two kinds of traps have similar characteristic in increasing with the hot-carrier-stress time.This analysis allows one to obtain a clear physical picture of the effects of the hot-carrier-stress on the generating of interface-and oxide-traps,which help to understand the degradation and reliability of the SOI-MOSFETs.关键词
热载流子应力效应/界面陷阱/界面电荷R-G电流/栅控二极管/SOI NMOSFETKey words
SOI-NMOS device/hot-carrier-effect/interfa分类
信息技术与安全科学引用本文复制引用
何进,张兴,黄如,王阳元..新的正向栅控二极管技术分离热载流子应力诱生SOI NMOSFET界面陷阱和界面电荷的研究[J].半导体学报,2002,23(1):11-15,5.基金项目
Motorola和北京大学资助项目(合同号:MSPSDDLCHINA-0004) （合同号:MSPSDDLCHINA-0004）
