半导体学报2005，Vol.26Issue(6)：1116-1120,5.
RF-MBE生长的高Al势垒层AlGaN/GaN HEMT结构
RF-MBE Grown AlGaN/GaN HEMT Structure with High Al Content
摘要
Abstract
A Si doped AlGaN/GaN HEMT structure with high Al content (x= 44%) in the barrier layer is grown on sapphire substrate by RF-MBE. The structural and electrical properties of the heterostructure are investigated by the triple axis X-ray diffraction and Van der Pauw-Hall measurement, respectively. The observed prominent Bragg peaks of the GaN and AlGaN and the Hall results show that the structure is of high quality with smooth interface.fabricated and characterized. Better DC characteristics, maximum drain current of 1.0A/mm and extrinsic transconductance of 218mS/mm are obtained when compared with HEMTs fabricated using structures with lower Al mole fraction in the AlGaN barrier layer. The results suggest that the high Al content in the AlGaN barrier layer is promising in improving material electrical properties and device performance.关键词
高电子迁移率晶体管/GaN/二维电子气/RF-MBE/功率器件Key words
HEMT/GaN/2DEG/RF-MBE/power device分类
信息技术与安全科学引用本文复制引用
王晓亮,李晋闽,王翠梅,胡国新,王军喜,刘新宇,刘键,冉军学,钱鹤,曾一平..RF-MBE生长的高Al势垒层AlGaN/GaN HEMT结构[J].半导体学报,2005,26(6):1116-1120,5.基金项目
中国科学院知识创新工程,国家自然科学基金(批准号:60136020),国家重点基础研究发展规划(批准号:G20000683,2002CB311903)和国家高技术研究发展计划(批准号:2002AA305304)资助项目 （批准号:60136020）
