半导体学报2003，Vol.24Issue(1)：11-17,7.
1.55μm张应变InGaAsP/InGaAsP量子阱偏振不灵敏半导体光放大器的优化设计
Design of Tensile Strained InGaAsP/InGaAsP MQW for 1.55μm Polarization Independent Semiconductor Optical Amplifier
邱伟彬 1何国敏 2董杰 1王圩1
作者信息
- 1. 中国科学院半导体研究所,国家光电子工艺中心,北京,100083
- 2. 厦门大学物理系,厦门,361005
- 折叠
摘要
Abstract
The theoretical optimization of tensile strained InGaAsP/InGaAsP MQW for 1.55μm windows polarization-independent semiconductor optical amplifier is reported.The valence-band structure of the MQW is calculated by using k*p method,in which 6×6 Luttinger effective-mass Hamiltonian is taken into account.The polarization dependent optical gain is calculated with various well width,strain,and carrier density.关键词
半导体光放大器/偏振不灵敏/多量子阱Key words
semiconductor optical amplifier/polarization independence/MQW分类
信息技术与安全科学引用本文复制引用
邱伟彬,何国敏,董杰,王圩..1.55μm张应变InGaAsP/InGaAsP量子阱偏振不灵敏半导体光放大器的优化设计[J].半导体学报,2003,24(1):11-17,7.
