半导体学报2001，Vol.22Issue(1)：11-17,7.
1.55μm In1－x－yGaｙAlｘAs压缩应变量子阱激光器的近似阱宽和光增益公式
Approximate Well Width and Optical Gain Formulas of 1.55μm In1-x-yGayAlxAs Compressively Strained Quantum-Well Laser
张冶金 1陈维友 1蒋恒 1刘彩霞 1刘式墉1
作者信息
摘要
Abstract
Using Harrison's model and anisotropic parabolic approximation,the band structure of In1-x-yGayAlxAs compressively strained quantum wells is calculated.To design lasers with 1.55μm wavelength,it is necessary to analyze the well width,differential gain,transparency carrier density and the characteristic gain for an arbitrary composition.Some useful empirical formulas are also presented.关键词
In1－x－yGaｙAlｘAs/量子阱激光器/线性增益/微分增益分类
信息技术与安全科学引用本文复制引用
张冶金,陈维友,蒋恒,刘彩霞,刘式墉..1.55μm In1－x－yGaｙAlｘAs压缩应变量子阱激光器的近似阱宽和光增益公式[J].半导体学报,2001,22(1):11-17,7.
