半导体学报2005，Vol.26Issue(6)：1121-1125,5.
薄起始层的VHF PECVD底栅微晶硅薄膜晶体管
A VHF PECVD Micro-Crystalline Silicon Bottom Gate TFT with a Thin Incubation Layer
摘要
Abstract
The incubation layer with amorphous structure between the substrate and crystalline layer may obviously affect the performance for a microcrystalline Si thin film transistor (μc-Si TFT) ,especially for the bottom gate TFT (BG-TFT). It is found that decreasing the ratio of SiH4/(H2 +SiH4) is an effective way to decrease the incubation layer thickness of μc-Si directly deposited by VHF PECVD without any further thermal or laser treatment. Based on the μc-Si with a thin incubation layer, the BG-TFT with Al/SiNx/μc-Si/n+ -μc-Si/Al structure is fabricated. The ravoltage is about 5V.关键词
微晶硅/起始层/硅烷浓度/底栅薄膜晶体管Key words
microcrystalline silicon/incubation layer/silicon concentration/bottom gate μc-Si TFT分类
信息技术与安全科学引用本文复制引用
李娟,张震,赵淑云,刘建平,吴春亚,张晓丹,孟志国,赵颖,熊绍珍,张丽珠..薄起始层的VHF PECVD底栅微晶硅薄膜晶体管[J].半导体学报,2005,26(6):1121-1125,5.基金项目
国家自然科学基金(批准号: 60437030,60077011和69907002),国家高技术研究发展计划(批准号:2002AA303261)和天津市自然科学基金(批准号:02360211)资助项目 （批准号: 60437030,60077011和69907002）
