半导体学报2009，Vol.30Issue(5)：113-116,4.DOI:10.1088/1674-4926/30/5/055012
An approach to the optical interconnect made in standard CMOS process
An approach to the optical interconnect made in standard CMOS process
摘要
Abstract
A standard CMOS optical interconnect is proposed, including an octagonal-annular emitter, a field oxide,metal 1-PSG/BPSG-metal 2 dual waveguide, and an ultra high-sensitivity optical receiver integrated with a fingered P/N-well/P-sub dual photodiode detector. The optical interconnect is implemented in a Chartered 3.3-V 0.35-μm standard analog CMOS process with two schemes for the research of the substrate noise coupling effect on the optical interconnect performance: with or without a GND-guardring around the emitter. The experiment results show that the optical interconnect can work at 100 kHz, and it is feasible to implement optical interconnects in standard CMOS processes.关键词
optical interconnect/standard CMOS/emitter/waveguide/ultra high-sensitivityKey words
optical interconnect/standard CMOS/emitter/waveguide/ultra high-sensitivity分类
信息技术与安全科学引用本文复制引用
Yu Changliang,Mao Luhong,Xiao Xindong,Xie Sheng,Zhang Shilin..An approach to the optical interconnect made in standard CMOS process[J].半导体学报,2009,30(5):113-116,4.基金项目
Project supported by the National Natural Science Foundation of China (Nos.60536030, 60676038) and the Tianjin Natural Science Foundation (No.06YFJZJC00200). （Nos.60536030, 60676038）
