半导体学报2002，Vol.23Issue(2)：113-119,7.
用三带和全带模型蒙特卡罗方法模拟纤锌矿相GaN体材料输运特性结果的比较
Comparison Between Three-Valley Model and Full Band Model in Monte Carlo Simulation of Bulk Wurtzite GaN
郭宝增 1UmbertoRavaioli1
作者信息
- 1. 河北大学电子与信息工程学院,保定,071002,中国
- 折叠
摘要
Abstract
The Monte Carlo simulators with the threevalley model and the full band Monte Carlo model are used to explore electron transport in bulk wurtzite gallium itride (GaN).Comparison of the results based on the two models is made.The results based on both models are basically the same at the lower field region,but exhibit some differences at the higher field region.The electron average energy exhibits obvious difference at the high field region between the two models.This difference further causes several other differences of GaN properties,such as the drift velocity versus field characteristics,the repopulation.Because of the complicated energy band structures at the highenergy region for wurtzite GaN,the analytical band structures in the threevalley model can not cover all properties of the band structures of wurtzite GaN,so the results based on the full band Monte Carlo model should be more exact.关键词
蒙特卡罗模拟/钎锌矿相氮化镓/输运特性/电子结构Key words
Monte Carlo simulation/wurtzite GaN/transport properties/band structures分类
信息技术与安全科学引用本文复制引用
郭宝增,UmbertoRavaioli..用三带和全带模型蒙特卡罗方法模拟纤锌矿相GaN体材料输运特性结果的比较[J].半导体学报,2002,23(2):113-119,7.
