光学精密工程2003,Vol.11Issue(2):114-119,6.
钝化多晶线路中电迁移损伤的预测
Prediction of electromigration failure in passivated polycrystalline line
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作者信息
- 1. Department of Intelligent Machines and System Engineering, Hirosaki University, 3 Bunkyo-cho, Hirosaki 036-8561, Japan;Department of Mechanical Engineering, Tohoku University, 01 Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan;Department of Mechanical Engineering, Tohoku University, 01 Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan;Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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摘要
Abstract
Recently, a governing parameter for electromigration damage in passivated polycrystalline lines, AFD*gen, was formulated considering the effect of the atomic density gradient. In this study, a prediction method for electromigration failure in a passivated polycrystalline line was proposed using AFD*gen. The characteristics of film used for prediction is established in advance using a method based on AFD*gen. The film characteristics of metal lines with different lengths were determined experimentally by AFD*gen-based method. From the film characteristics obtained, both lifetime and location of failure in the passivated polycrystalline lines were predicted through numerical simulation of failure process. Good agreement has been shown between the predicted and the experimental results concerning both lifetime and location of failure.关键词
electromigration/passivated polycrystallineKey words
electromigration/passivated polycrystalline分类
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..钝化多晶线路中电迁移损伤的预测[J].光学精密工程,2003,11(2):114-119,6.