电子器件2008，Vol.31Issue(1)：115-116,2.
氧化锌薄膜生长与ZnO基薄膜晶体管制备
ZnO Film Growth and the Fabrication of ZnO-Based Thin Film Transistors
摘要
Abstract
The ZnO films were deposited on the substrate of glass by MOCVD. The X-ray diffraction pat- terns of samples show sharp diffraction peaks ZnO(0 0 2),indicating that the films were highly c-axis ori-ented. Based on the ZnO film,we fabricated ZnO thin film transistor(ZnO-TFT).关键词
氧化锌/薄膜晶体管/MOCVDKey words
ZnO thin film/Thin film transistor/ MOCVD分类
信息技术与安全科学引用本文复制引用
马仙梅,荆海,马凯,常遇春,杜国同,杨小天,朱慧超,王超,高文涛,金虎,齐晓薇,高博,付国柱..氧化锌薄膜生长与ZnO基薄膜晶体管制备[J].电子器件,2008,31(1):115-116,2.基金项目
This work is supported by NCET(No.05-0326,NSFC (No.60576054,60576043,60576056),Jilin Univresity In-novation Foundation,project of Chang chun science and technology plans with contract number of 2006303,projectsof Ministry of Construction.China and Department of Education of Jilin province （No.05-0326,NSFC (No.60576054,60576043,60576056）
