半导体学报2006，Vol.27Issue(7)：1155-1158,4.
MOSFET表面势解析近似方法的改进
Refinement of an Analytical Approximation of the Surface Potential in MOSFETs
摘要
Abstract
A refinement of an analytical approximation of the surface potential in MOSFETs is proposed by introducing a high-order term. As compared to the conventional treatment with accuracy between 1nV and 0. 03mV in the cases with an oxide thickness tox = 1 ～ 10nm and substrate doping concentration Na = 1015 ～ 1018 cm-3 , this method yields an accuracy within about 1pV in all cases. This is comparable to numerical simulations, but does not require trading off much computation efficiency. More importantly, the spikes in the error curve associated with the traditional treatment are eliminated.关键词
MOSFET/表面势/解析近似/器件建模Key words
MOSFET/surface potential/analytical approximation/device modeling分类
信息技术与安全科学引用本文复制引用
陆静学,黄风义,王志功,吴文刚..MOSFET表面势解析近似方法的改进[J].半导体学报,2006,27(7):1155-1158,4.基金项目
Project supported by the National Natural Science Foundation of China(No. 60476012) ,the Fund of Southeast University(No. XJ0404142), and the National Doctoral Research Fund (No. 20040286022) 国家自然科学基金(批准号:60476012),东南大学基金(批准号:XJ0404142)及博士研究基金(批准号:20040286022)资助项目 （No. 60476012）
