人工晶体学报2007，Vol.36Issue(5)：1160-1165,6.
改进的升华法制备氮化铝单晶体
Growth of AIN Single Crystals by Modified Sublimation Method
摘要
Abstract
AlN crystals were grown by modified sandwich sublimation method in nitrogen atmosphere.High quality AlN single crystals with typical hexagonal crystal habit were obtained by optimizing growth conditions. It was found that the AlN crystals which were grown on different regions in the crucible exhibit different crystal habits. The influence of the temperature gradient on the size and morphology of the crystals was discussed.关键词
升华法/氮化铝单晶体/晶体形态Key words
sublimation method/ AlN single crystal /crystal morphology分类
数理科学引用本文复制引用
孙秀明,郑瑞生,鲁枫,武红磊,刘文,敬守勇..改进的升华法制备氮化铝单晶体[J].人工晶体学报,2007,36(5):1160-1165,6.基金项目
The project supported by the National Natural Science Foundation d China (No. 60376003 （）
No. 60576005) （）
The Natural Science Foundation of Guangdong Province(No.04011297) （No.04011297）
