半导体学报2009，Vol.30Issue(4)：116-120,5.DOI:10.1088/1674-4926/30/4/046001 PACC:4285D;6220P
Effects of pattern characteristics on copper CMP
Effects of pattern characteristics on copper CMP
Ruan Wenbiao 1Chen Lan 1Li Zhigang 1Ye Tianchun1
作者信息
- 1. Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China
- 折叠
摘要
Abstract
Copper chemical mechanical polishing(CMP)is influenced by geometric characteristics such as line width and pattern density,as well as by the more obvious parameters such as slurry chemistry,pad type,polishing pressure and rotational speed.Variadons in the copper thickness across each die and across the wafer Can impact the circuit performance and reduce the yield.In this paper,we propose a modeling method to simulate the polishing behavior as a function of layout pattern factors.Under the same process conditions,the pattern density,the line width and the line spacing have a strong influence on copper dishing,dielectric erosion and topography.The test results showed:the wider the copper line or the spacing,the higher the copper dishing;the higher the density,the higher the dielectric erosion;the dishing and erosion increase slowly as a function of increasing density and go into saturation when the density is more than 0.7.关键词
copper chemical mechanical polishing/line width/line spacing/density/copper dishing/dielectric erosionKey words
copper chemical mechanical polishing/line width/line spacing/density/copper dishing/dielectric erosion分类
信息技术与安全科学引用本文复制引用
Ruan Wenbiao,Chen Lan,Li Zhigang,Ye Tianchun..Effects of pattern characteristics on copper CMP[J].半导体学报,2009,30(4):116-120,5.
