半导体学报2007，Vol.28Issue(8)：1169-1172,4.
基于不同测量手段的纳米晶器件的存储特性
Storage Characteristics of Nano-Crystal Si Devices Using Different Measurements for MOS Capacitors
摘要
Abstract
The storage characteristics of nano-crystal Si (NC-Si) devices,especially for MOS capacitors,are studied by cross sectional transmission electron microscopy (TEM) and capacitance-voltage (C-V) measurement under different conditions,including programming and erasing at different temperatures and gate voltages,as well as using +/-bias-temperature (BT) measurements.Physical mechanisms such as carrier trapping,interface state filling,and temperature related deterioration are revealed.The experimental results demonstrate that the degradation of the program window and threshold voltage (VT) shift at high temperature,large voltage sweep range,and bias applied to sweep voltage is strongly related to the type of majority carriers.关键词
纳米晶/存储/测量Key words
nano-crystal/storage/measurement分类
信息技术与安全科学引用本文复制引用
李蔚,张志刚,梁仁荣,何洋,王柳笛,朱钧..基于不同测量手段的纳米晶器件的存储特性[J].半导体学报,2007,28(8):1169-1172,4.基金项目
Project supported by the State Key Development Program for Basic Research of China (No.2006CB302702) （No.2006CB302702）
国家重点基础研究发展规划资助项目(批准号:2006CB302702) （批准号:2006CB302702）
