电子器件2008，Vol.31Issue(1)：117-120,123,5.
基于物理并适用于电路仿真的多晶硅薄膜晶体管薄层电荷模型
A Physics-Based Charge Sheet Model of Polysilicon Thin-Film Transistors for Circuit Simulation
邓婉玲 1郑学仁 1陈荣盛 1吴为敬1
作者信息
- 1. 华南理工大学微电子研究所,广州,510640
- 折叠
摘要
Abstract
A new physical surface-potential-based current model of polysilicon thin-film transistors (poly-SiTFTs) using charge sheet approach suitable for circuit simulation is presented. An extremely accurate and computationally efficient approximation for the poly-Si TFTs surface potential is derived and verifed. The physics-based mobility equations of the model consider the grain boundaries height and mobility degrada-tion caused by phonon scattering and surface roughness scattering. This model based on Brews's charge sheet model and the above non-iterative computation of surface potential also accounts for DIBL effect,kink effect, and channel-length modulation. Comparison between the model results and measured data shows excellent agreement over wide range of operating voltages and for devices with different channel lengths. All the basic equations in our model have an analytic form for implementation in circuit simula-tors, such as SPICE. And the model exhibits continuity of current expressions which fulfils the require-ment of circuit simulators.关键词
多晶硅薄膜晶体管/表面势/薄层电荷模型Key words
polysilicon thin-film transistors/ surface potential/ charge sheet model分类
信息技术与安全科学引用本文复制引用
邓婉玲,郑学仁,陈荣盛,吴为敬..基于物理并适用于电路仿真的多晶硅薄膜晶体管薄层电荷模型[J].电子器件,2008,31(1):117-120,123,5.
