半导体学报2003，Vol.24Issue(2)：117-121,5.
采用局域注氧技术制备的新型DSOI场效应晶体管的热特性
Investigation of Thermal Property of Novel DSOI MOSFETs Fabricated with Local SIMOX Technique
摘要
Abstract
DSOI,bulk-Si and SOI MOSFETs are fabricated on the same die successfully using local oxygen implantation process.The thermal properties of the three kinds of devices are described and compared from simulation and measurement.Both simulation and measurement prove that DSOI MOSFETs have the advantage of much lower thermal resistance of substrate and suffer less severe self-heating effect than their SOI counterparts. At the same time,the electrical advantages of SOI devices can stay.The thermal resistance of DSOI devices is very close to that of bulk devices and DSOI devices can keep this advantage into deep sub-micron realm.关键词
DSOI/SOI/局域注氧技术/自热效应/热阻Key words
DSOI/SOI/local SIMOX/self-heating effect/thermal resistance分类
信息技术与安全科学引用本文复制引用
林羲,何平,田立林,李志坚,董业民,陈猛,王曦..采用局域注氧技术制备的新型DSOI场效应晶体管的热特性[J].半导体学报,2003,24(2):117-121,5.基金项目
国家自然科学基金(批准号:59995550-1)和国家重点基础研究专项经费(编号:G2000036501)资助项目 （批准号:59995550-1）
