半导体学报2007，Vol.28Issue(8)：1179-1183,5.
双栅肖特基源漏MOSFET的阈值电压模型
Threshold Voltage Model of a Double-Gate MOSFET with Schottky Source and Drain
摘要
Abstract
A quasi two-dimensional (2D) analytical model of a double-gate (DG) MOSFET with Schottky source/drain is developed based on the Poisson equation.The 2D potential distribution in the channel is calculated.An expression for threshold voltage for a short-channel DG MOSFET with Schottky S/D is also presented by defining the turn-on condition.The results of the model are verified by the numerical simulator DESSIS-ISE.关键词
双栅/肖特基势垒/阈值电压Key words
double-gate/Schottky barrier/threshold voltage分类
电子信息工程引用本文复制引用
徐博卷,杜刚,夏志良,曾朗,韩汝琦,刘晓彦..双栅肖特基源漏MOSFET的阈值电压模型[J].半导体学报,2007,28(8):1179-1183,5.基金项目
Project supported by the State Key Development Program for Basic Research of China (No.2006CB302705) and the National Natural Science Foundation of China (No.60606013) （No.2006CB302705）
国家重点基础研究发展规划(批准号:2006CB302705)和国家自然科学基金(批准号:60606013)资助项目 （批准号:2006CB302705）
