半导体学报2002，Vol.23Issue(2)：120-123,4.
立方相GaN的高温MOCVD生长
Growth of Cubic GaN by MOCVD at High Temperature
摘要
Abstract
High quality cubic GaN (c-GaN) is grown by metalorganic vapor deposition (MOCVD) at an increased growth temperature of 900℃,with the growth rate of 1.6μm/h.The full width at half maximum (FWHM) of room temperature photoluminescence (PL) for the high temperature grown GaN film is 48meV.It is smaller than that of the sample grown at 830℃.In X-ray diffraction (XRD) measurement,the high temperature grown GaN shows a (002) peak at 20° with a FWHM of 21′.It can be concluded that,although c-GaN is of metastable phase,high growth temperature is still beneficial to the improvement in its crystal quality.The relationship between the growth rate and growth temperature is also discussed.关键词
立方相/GaN/MOCVDKey words
cubic/GaN/MOCVD分类
信息技术与安全科学引用本文复制引用
付羿,孙元平,沈晓明,李顺峰,冯志宏,段俐宏,王海,杨辉..立方相GaN的高温MOCVD生长[J].半导体学报,2002,23(2):120-123,4.基金项目
国家自然科学基金资助项目 （）
