物理学报2001，Vol.50Issue(1)：120-125,6.
SOI MOSFET转移特性中的深度饱和现象研究
THE DEEP-SATURATION STUDY OF DRAIN CURRENT IN SOI MOSFET'S TRANSFER CHARACTERISTICS
摘要
Abstract
In this work, the electric characteristics of SOI MOSFET are investigated. The deep-saturation of drain current in transfer character is found in many transistors. After applying the channel hot-carriers stress, the electric parameters degradation is very different from that of the normal transistors. It has been shown that the deep-saturation effect in NMOSFET disappears after stress, but in PMOS, this effect is not weakened by hot-carriers injection. The results are of importance for reliability designing and reliability strengthening of SOI devices.关键词
SOI/深度饱和/热载流子/界面陷阱分类
数理科学引用本文复制引用
郝跃,朱建纲,郭林,张正幡..SOI MOSFET转移特性中的深度饱和现象研究[J].物理学报,2001,50(1):120-125,6.基金项目
国防预先基金(批准号：8.5.3.4)资助的课题. Project supported by the National Defense Foundation of China (Grant No.8.5.3.4). （批准号：8.5.3.4）
