半导体学报2004，Vol.25Issue(2)：121-125,5.
RF-MBE生长的AlGaN/GaN高电子迁移率晶体管特性
Characteristics of AlGaN/GaN HEMTs Grown by Plasma-Assisted Molecular Beam Epitaxy
摘要
Abstract
AlGaN/GaN high electron mobility transistor (HEMT) materials are grown by RF plasma-assisted molecular beam epitaxy (RF-MBE) and HEMT devices are fabricated and characterized.The HEMT materials have a mobility of 1035cm2/(V·s) at sheet electron concentration of 1.0×1013cm-2 at room temperature.For the devices fabricated using the materials,a maximum saturation drain-current density of 925mA/mm and a peak extrinsic transconductance of 186mS/mm are obtained on devices with gate length and width of 1μm and 80μm respectively.The ft,unit-current-gain frequency of the devices,is about 18.8GHz.关键词
高电子迁移率晶体管/氮化镓/场效应晶体管/RF-MBEKey words
HEMT/GaN/FET/RF-MBE分类
信息技术与安全科学引用本文复制引用
王晓亮,李晋闽,孔梅影,林兰英,胡国新,王军喜,刘新宇,刘键,刘宏新,孙殿照,曾一平,钱鹤..RF-MBE生长的AlGaN/GaN高电子迁移率晶体管特性[J].半导体学报,2004,25(2):121-125,5.基金项目
国家自然科学基金(批准号:60136020),国家重点基础研究发展规划(Nos.G20000683,2002CB311903)和国家高技术研究发展计划(No.2002AA305304)资助项目 （批准号:60136020）
