半导体学报2004，Vol.25Issue(10)：1215-1220,6.
一种适用于短沟道LDD MOSFET参数提取的改进方法
A Novel Technique of Parameter Extraction for Short Channel Length LDD MOSFETs
摘要
Abstract
A novel parameter extraction technique suitable for short channel length lightly-doped-drain (LDD) MOSFET's is proposed which segments the total gate bias range,and executes the linear regression in every subsections,yielding the gate bias dependent parameters,such as effective channel length,parasitic resistance,and mobility,etc.This method avoids the gate bias range optimization,and retains the accuracy and simplicity of linear regression.The extracted gate bias dependent parameters are implemented in the compact I-V model which has been proposed for deep submicron LDD MOSFET's.The good agreements between simulations and measurements of the devices on 0.18μm CMOS technology indicate the effectivity of this technique.关键词
轻掺杂漏MOSFET/参数提取/寄生串联电阻/迁移率Key words
LDD MOSFET/parameter extraction/parasitic series resistance/mobility分类
信息技术与安全科学引用本文复制引用
于春利,郝跃,杨林安..一种适用于短沟道LDD MOSFET参数提取的改进方法[J].半导体学报,2004,25(10):1215-1220,6.基金项目
国家自然科学基金资助项目(批准号:60206006) （批准号:60206006）
