半导体学报2008，Vol.29Issue(1)：12-16,5.
用MOCVD方法在GaAs衬底上低温生长ZnO薄膜
Low-Temperature Growth of ZnO Films on GaAs by Metal Organic Chemical Vapor Deposition
史慧玲 1马骁宇 1胡理科 1崇峰1
作者信息
- 1. 中国科学院半导体研究所,光电子器件国家研究中心,北京,100083
- 折叠
摘要
Abstract
ZnO thin films were grown on GaAs (001) substrates by metal-organic chemical vapor deposition (MOCVD) at low temperatures ranging from 100 to 400℃. DEZn and H2O were used as the zinc precursor and oxygen precursor,respectively. The effects of the growth temperatures on the growth characteristics and optical properties of ZnO films were investigated. The X-ray diffraction measurement (XRD) results indicated that all the thin films were grown with highly caxis orientation. The surface morphologies and crystal properties of the films were critically dependent on the growth temperatures. Although there was no evidence of epitaxial growth, the scanning electron microscopy (SEM) image of ZnO film grown at 400℃ revealed the presence of ZnO microcrystallines with closed packed hexagon structure. The photoluminescence spectrum at room temperature showed only bright band-edge (3.33eV) emissions with little or no deep-level emission related to defects.关键词
MOCVD/ZnO薄膜/GaAs/低温Key words
metal-organic chemical vapor deposition/ ZnO film/ GaAs/ low-temperature分类
电子信息工程引用本文复制引用
史慧玲,马骁宇,胡理科,崇峰..用MOCVD方法在GaAs衬底上低温生长ZnO薄膜[J].半导体学报,2008,29(1):12-16,5.
