半导体学报2008，Vol.29Issue(7)：1249-1253,5.
一个新型CMOS电流模带隙基准源
A Novel CMOS Current Mode Bandgap Reference
摘要
Abstract
A novel CMOS bandgap reference is presented. The output reference of this new current mode structure can be set to an arbitrary value above the bandgap voltage of silicon, avoiding offset in application. It also overcomes the systematic mismatch of conventional current mode bandgap references. The proposed bandgap reference has been implemented in UMC 0.18μm mixed mode technology. Under the supply voltage of 1.6V, the proposed bandgap reference provides an output reference of 1.45V and consumes 27μA of supply current. Using no curvature compensation, it can reach a temperature coefficient of 23ppm/℃ from 30 t0 150℃ with a line regulation of 2.1mV/V from 1.6 to 3V and a PSRR of 40dB at DC frequency. The chip area of the bandgap reference (without pad) is 0.088mm2.关键词
CMOS/带晾基准源/电流模Key words
CMOS/bandgap reference/current mode分类
信息技术与安全科学引用本文复制引用
幸新鹏,李冬梅,王志华..一个新型CMOS电流模带隙基准源[J].半导体学报,2008,29(7):1249-1253,5.基金项目
国家自然科学科学基金(批准号:60475018)和北京市科技发展基金(批准号:D0305004040221-2-05)资助项目 （批准号:60475018）
Project supported by the National Natural Science Foundation of China (N0.60475018) and the Beijing Municipal Science & Technology Development Program (N0.D0305004040221-2-05) （N0.60475018）
