西安电子科技大学学报（自然科学版）2008，Vol.35Issue(1)：125-128,4.
AlGaN/GaN HEMTs表面钝化抑制电流崩塌的机理研究
Mechanism study of the surface passivation effect on current collapse characteristics of AIGaN/GaN HEMTs
摘要
Abstract
The effects of surface passivation on AlGaN/GaN high-electron-mobility transistors (HEMTs) have been investigated. The surface passivation layer of Si3N4 is deposited by plasma enhanced chemical vapor deposition (PECVD). The current-voltage and gate-drain diode characteristics of AlGaN/GaN HEMTs before and after passivation are analyzed. The current collapse under DC sweep has been significantly decreased after passivation and the existence of small dispersion of drain current is due to traps in the GaN buffer. The drain current increases after passivation, because surface passivation reduces the surface state density and so increases the sheet carrier density shown in Transmission Linear Model (TLM) measurement.关键词
高电子迁移率晶体管/钝化/电流崩塌Key words
high electron mobility transistors / passivation/ current collapse分类
信息技术与安全科学引用本文复制引用
岳远征,郝跃,张进城,冯倩..AlGaN/GaN HEMTs表面钝化抑制电流崩塌的机理研究[J].西安电子科技大学学报（自然科学版）,2008,35(1):125-128,4.基金项目
国家重大基础研究(973)资助(51327020301) （973）
