半导体学报2002，Vol.23Issue(12)：1267-1274,8.
亚50nm自对准双栅MOSFET的结构设计
Structure Design Considerations of a Sub-50nm Self-Aligned Double-Gate MOSFET
摘要
Abstract
A comprehensive way to design a sub-50nm SADG MOSFET with the ability of being fabricated by improved CMOS technique is described.Under this way,the gate length and thickness of Si island of DG device show many different scaling limits for various elements.Meanwhile,the spacer insulator shows a kind of width thickness on device drain current and circuit speed.A model about that effect is developed and offers design consideration for future.A new design of channel doping profile,called SCD,is also discussed here in detail.The DG device with SCD can achieve a good balance between the volume inversion operation mode and the control of Vth.Finally,a guideline to make a SADG MOSFET is presented.关键词
双栅MOSFET/结构设计/侧墙效应/SCDKey words
double-gate MOSFET/structure design/sidewall effect/SCD分类
信息技术与安全科学引用本文复制引用
殷华湘,徐秋霞..亚50nm自对准双栅MOSFET的结构设计[J].半导体学报,2002,23(12):1267-1274,8.基金项目
国家自然科学基金(批准号:60176010)和国家"973"资助项目 （批准号:60176010）
