半导体学报2008，Vol.29Issue(7)：1268-1273,6.
基于0.5μm CMOS工艺的高压器件
High-Voltage MOSFETs in a 0.5μm CMOS Process
摘要
Abstract
There is growing interest in developing high-voltage MOSFET devices that can be integrated with low.voltage CMOS digital and analog circuits. In this paper, high-voltage n-and p-type MOSFETs are fabricated in a commercial 3.3/ 5V 0.5μm n-well CMOS process without adding any process steps using n-well and p-channel stops. High current and high. voltage transistors with breakdown voltages between 23 and 35V for the nMOS transistors with different layout parameters and 19V for the pMOS transistors are achieved. This paper also presents the insulation technology and characterization results for these high-voltage devices.关键词
高压MOS器件/低压MOS器件/0.5μm CMOS工艺/工艺兼容技术Key words
high-voltage MOSFET/low-voltage MOSFET/0.5μm CMOS process/embedded manufacture technology分类
信息技术与安全科学引用本文复制引用
赵文彬,李蕾蕾,于宗光..基于0.5μm CMOS工艺的高压器件[J].半导体学报,2008,29(7):1268-1273,6.基金项目
电子元器件型谱系列科研资助项目(批准号:0105TJ002A) （批准号:0105TJ002A）
Project supported by the Research Program of Series Type Spectrum for Electronic Component and Device (No.0105TJ002A) （No.0105TJ002A）
