半导体学报2005，Vol.26Issue(7)：1291-1294,4.
一种新型抗辐照SOI隔离结构
A Novel Radiation Tolerant SOI Isolation Structure
赵洪辰 1海潮和 1韩郑生 1钱鹤 1司红2
作者信息
- 1. 中国科学院微电子研究所,北京,100029
- 2. 钢铁研究总院,北京,100081
- 折叠
摘要
Abstract
A novel radiation tolerant SOI isolation structure,consisting of thin SiO2/polysilicon/field SiO2 multilayers,is proposed. A device with this structure does not show obvious changes in subthreshold characteristics and leakage current,indicating a superior radiation tolerance to traditional LOCOS.关键词
隔离结构/抗辐照/SOIKey words
isolation structure/radiation tolerance/SOI分类
信息技术与安全科学引用本文复制引用
赵洪辰,海潮和,韩郑生,钱鹤,司红..一种新型抗辐照SOI隔离结构[J].半导体学报,2005,26(7):1291-1294,4.
