液晶与显示2001，Vol.16Issue(2)：129-134,6.
源漏轻掺杂结构多晶硅薄膜晶体管模拟研究
Simulation of Static-Characteristics of Lightly-doped-drain Polysilicon Thin Film Transistors
摘要
Abstract
purpose of reducing the p-Si TFT off-state current, the structures of lightly doped drain (LDD) were used. Applying a homojunction model of semiconductor theory and considering the off-state current modified by hot carrier effect, the static-characteristics of LDD p-Si TFT were simulated. The on/off current switching ratios of p-Si TFT were investigated by a series of LDD doping concentrations and lengths.The LDD structures reduce TFT′s off-state current to 10-11 A and increase the on/off current switching ratios of p-Si TFT to 106. The results will be valuable referencepoints for designing and fabricating of p-Si TFT.关键词
轻掺杂/多晶硅薄膜晶体管/同型结/热电子/漏电流Key words
lightly-doped-drain/polysilicon thin film transistor/homojunction/hot carrier/leakage current分类
信息技术与安全科学引用本文复制引用
纪世阳,李牧菊,杨柏梁..源漏轻掺杂结构多晶硅薄膜晶体管模拟研究[J].液晶与显示,2001,16(2):129-134,6.基金项目
中国科学院“九五”重大项目（KY951-A1-502）；吉林省“九五”科技攻关项目（970103-01）：国家自然科学基金资助项目 （）
