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Room-temperature electroluminescence of p-ZnxMg1-xO:Na/n-ZnO p-n junction light emitting diode

Ye Zhizhen Zhang Liqiang Huang Jingyun Zhang Yinzhu Zhu Liping Lü Bin Lü Jianguo Wang Lei Jin Yizheng Jiang Jie Xue Ya Zhang Jun Lin Shisheng Yang Dan

半导体学报2009，Vol.30Issue(8)：1-3,3.

半导体学报2009，Vol.30Issue(8)：1-3,3.DOI:10.1088/1674-4926/30/8/081001

Room-temperature electroluminescence of p-ZnxMg1-xO:Na/n-ZnO p-n junction light emitting diode

Ye Zhizhen ¹Zhang Liqiang ¹Huang Jingyun ¹Zhang Yinzhu ¹Zhu Liping ¹Lü Bin ¹Lü Jianguo ¹Wang Lei ¹Jin Yizheng ¹Jiang Jie ¹Xue Ya ¹Zhang Jun ¹Lin Shisheng ¹Yang Dan¹

作者信息

1. State Key Laboratory of Silicon Materials,Department of Materials,Zhejiang University,Hangzhou 310027,China
折叠

摘要

Abstract

tifying behavior and obvious electroluminescence was realized by feeding a direct current up to 40 mA. Furthermore, its structural and electric characters are discussed as well.

关键词

ZnO/electroluminescence/Na doped/LED

Key words

ZnO/electroluminescence/Na doped/LED

分类

信息技术与安全科学

引用本文复制引用

Ye Zhizhen,Zhang Liqiang,Huang Jingyun,Zhang Yinzhu,Zhu Liping,Lü Bin,Lü Jianguo,Wang Lei,Jin Yizheng,Jiang Jie,Xue Ya,Zhang Jun,Lin Shisheng,Yang Dan..Room-temperature electroluminescence of p-ZnxMg1-xO:Na/n-ZnO p-n junction light emitting diode[J].半导体学报,2009,30(8):1-3,3.

基金项目

Project supported by the State Key Development Program for Basic Research of China (No. 2006CB604906) and the National Natural Science Foundation of China (No. 50532060). （No. 2006CB604906）

半导体学报

OA北大核心CSCDCSTPCDEI

ISSN：1674-4926

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