半导体学报2009，Vol.30Issue(2)：13-16,4.DOI:10.108811674-4926/30/2/022001
Formation of a silicon micropore array of a two-dimension electron multiplier by photo electrochemical etching
Formation of a silicon micropore array of a two-dimension electron multiplier by photo electrochemical etching
高延军 1端木庆铎 2王国政 1李野 1田景全1
作者信息
- 1. Changchun University of Science and Technology, Changchun 130022, China
- 2. Jilin University, Changchun 130012, China
- 折叠
摘要
Abstract
A semiconductor PEC etching method is applied to fabricate the n-type silicon deep micropore channel array. In this method, it is important to arrange the direction of the micropore array along the crystal orientation of the Si substrate. Otherwise, serious lateral erosion will happen. The etching process is also relative to the light intensity and HF concentration. 5% HF concentration and 10-15 cm distance between the light source and the silicon wafer are demonstrated to be the best in our experiments. The n-type silicon deep micropore channel array with aperture of 3μm and aspect ratio of 40-60, whose inner walls are smooth, is finally obtained.关键词
photo-electrochemical etching/ MCP/ electron multiplier/ micropore deep-channel n-type siliconKey words
photo-electrochemical etching/ MCP/ electron multiplier/ micropore deep-channel n-type silicon分类
信息技术与安全科学引用本文复制引用
高延军,端木庆铎,王国政,李野,田景全..Formation of a silicon micropore array of a two-dimension electron multiplier by photo electrochemical etching[J].半导体学报,2009,30(2):13-16,4.
